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Capacity 4000 GB
Form Factor 2.5"
Interface SATA III
Seq Read 560 MB/s
Seq Write 530 MB/s
Endurance (TBW) 1440 TBW
The Samsung 870 QVO 4TB represents the second generation of Samsung’s consumer QLC offerings, built around the proprietary Samsung MKX controller—the same silicon utilized in the TLC-based 870 EVO. This architecture is supported by 4GB of LPDDR4 DRAM for mapping tables and Samsung’s high-density V-NAND 4-bit MLC (QLC) flash memory. The drive is engineered to maximize storage density within the legacy SATA III interface, utilizing Intelligent TurboWrite (SLC caching) to mask the native write latency inherent to Quad-Level Cell media. The 4TB model includes an SLC cache (up to 78GB dynamic + 6GB static); sustained writes that exhaust this buffer see write speeds fall from 530 MB/s to approximately 160 MB/s, producing a pronounced write cliff. Consequently, the drive is categorized as a high-capacity storage volume (WORM – Write Once, Read Many) rather than a candidate for heavy mixed-use workloads or operating systems.
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