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Capacity 4000 GB
Form Factor 2.5"
Interface SATA III
Seq Read 560 MB/s
Seq Write 530 MB/s
Endurance (TBW) 2400 TBW
The Samsung 870 EVO 4TB represents the upper theoretical limit of the SATA III interface, utilizing Samsung’s proprietary in-house MKX controller paired with 4GB of Low-Power DDR4 (LPDDR4) SDRAM for address mapping. Internally, the drive employs Samsung’s 6th Generation (V6) 1xx-layer 3-bit MLC (TLC) V-NAND, a configuration designed to optimize endurance and latency within the constraints of the 6Gbps bus. Unlike many modern SATA SSDs that have moved to DRAM-less architectures, the 870 EVO retains a discrete DRAM cache at a standard ratio of 1MB per 1GB of storage, ensuring consistent random I/O performance during sustained workloads. To manage write speeds, the drive utilizes Intelligent TurboWrite, a variable SLC caching buffer that dynamically adjusts based on available capacity to maintain high throughput until the buffer is saturated. Field notes: early production batches of the 2TB and 4TB models (manufactured primarily in early 2021) experienced a notable rate of premature failures characterized by a spike in "0E" (Media and Integrity Errors) counts in SMART data, leading to uncorrectable bad blocks. Samsung released firmware updates (specifically version SVT02B6Q and later) to address underlying NAND voltage management issues; hardware analysts strongly recommend verifying firmware versions on new deployments to prevent potential data degradation.
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