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Capacity 1000 GB
Form Factor 2.5"
Interface SATA III
Seq Read 560 MB/s
Seq Write 530 MB/s
Endurance (TBW) 360 TBW
The Samsung 870 QVO 1000GB is built upon Samsung’s proprietary MKX controller (S4LR059), a proven architecture shared with the higher-end Samsung 870 EVO 1000GB, paired with dedicated LPDDR4 DRAM for address mapping. The drive utilizes Samsung’s V-NAND 4-bit MLC (QLC) flash memory, which increases storage density per cell compared to TLC alternatives but necessitates more complex error correction and wear-leveling algorithms. This configuration maximizes storage density within the SATA form factor and relies heavily on a variable pseudo-SLC cache to mask the native write latency of the QLC NAND. Technical analysis of the 1TB model reveals a heavy reliance on the "Intelligent TurboWrite" SLC caching technology. While the drive saturates the SATA interface during burst operations, sustained heavy transfers exceeding the cache capacity (approx. 42GB for the 1TB model) will see write speeds drop to approximately 80 MB/s. The drive is typically positioned as a specialized storage solution for "Write Once, Read Many" (WORM) archival tasks or game libraries, rather than write-intensive OS boot drive applications.
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