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Capacity 4000 GB
Form Factor M.2 2280
Interface PCIe 4.0 x4 / PCIe 5.0 x2
Seq Read 7250 MB/s
Seq Write 6300 MB/s
Endurance (TBW) 2400 TBW
The Samsung 990 EVO Plus 4000GB uses a proprietary Samsung in-house controller built on a 5nm process and follows a DRAM-less NVMe design that relies on Host Memory Buffer (HMB) to cache the translation layer in system memory. It leverages Samsung 8th Generation V-NAND (TLC) to push near-saturation of the PCIe 4.0 bus, supports a hybrid interface capable of PCIe 4.0 x4 or PCIe 5.0 x2 operation, and the 4TB model retains a single-sided PCB for thin-laptop compatibility. Thermal management includes a nickel-coated controller and a heat-spreading label, though sustained write workloads can reveal the limitations of a DRAM-less architecture compared to DRAM-equipped drives.
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Price history excludes Amazon sources