Samsung 990 EVO Plus 1000GB

The Samsung 990 EVO Plus 1000GB uses Samsung's 5nm Piccolo controller in a DRAM-less design that relies on a 64MB Host Memory Buffer (HMB). It pairs with Samsung V-NAND V8 TLC (236-layer) to achieve sequential throughput that effectively saturates the PCIe 4.0 interface. The drive supports a hybrid connection (PCIe 4.0 x4 or PCIe 5.0 x2), where the PCIe 5.0 x2 mode preserves maximum performance while using fewer physical lanes. The 5nm controller delivers high power efficiency and lower operating temperatures, which helps the drive maintain sustained write speeds before thermal throttling. The V8 NAND upgrade improves write latency and consistency compared to the non-Plus 990 EVO.

Key Specifications

• Capacity: 1000GB
• Interface: PCIe 4.0 x4 / PCIe 5.0 x2 (NVMe 2.0)
• Sequential Speeds: 7,150 MB/s Read / 6,300 MB/s Write
• Controller: Samsung Piccolo (S4LY022) 5nm
• NAND: Samsung V-NAND V8 TLC (236-Layer)
• DRAM Cache: None (HMB - Host Memory Buffer 64MB)
• Endurance: 600 TBW
• Security: AES 256-bit Encryption, TCG/Opal 2.0

Hardware Alternatives

• Lexar NM790 1000GB: Architectural rival in the high-end DRAM-less category using the Maxio MAP1602 controller paired with YMTC 232-layer TLC to reach similar PCIe 4.0 saturation speeds.
• TEAMGROUP MP44Q 1000GB: Another Maxio MAP1602-based competitor that targets high sequential throughput in a DRAM-less design.
• Western Digital WD_BLACK SN770 1000GB: Direct competitor in the DRAM-less space, built on older BiCS5 NAND architecture.
• Samsung 990 PRO 1000GB: Samsung's upper-tier model featuring a discrete LPDDR4 DRAM cache and the Pascal controller, offering superior random I/O performance for heavier workstation tasks.