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Capacity 2000 GB
Form Factor M.2 2280
Interface PCIe 4.0 x4 / PCIe 5.0 x2
Seq Read 5000 MB/s
Seq Write 4200 MB/s
Endurance (TBW) 1200 TBW
The Samsung 990 EVO represents a distinct architectural departure from its predecessors, transitioning the EVO line to a DRAM-less design anchored by Samsung’s proprietary Piccolo (S4LY022) controller. Manufactured on a 5nm process, this controller utilizes Host Memory Buffer (HMB) technology—allocating system RAM for the translation layer—rather than onboard DRAM, and pairs it with Samsung's 133-layer (V6 Prime) V-NAND TLC. The drive supports both PCIe 4.0 x4 and PCIe 5.0 x2; the PCIe 5.0 x2 capability allows the drive to achieve maximum performance using only two lanes on compatible platforms, reducing power draw and accommodating lane-limited designs. The engineering prioritizes power efficiency and thermal management over saturating the PCIe 4.0 bus. The 5nm controller offers best-in-class power efficiency, resulting in exceptionally low operating temperatures and rare thermal throttling. Enthusiasts transitioning from the Samsung 970 EVO Plus 2000GB should note the latency implications of the DRAM-less architecture; sustained write tests reveal that once the pseudo-SLC cache is exhausted, transfer speeds drop significantly, characteristic of HMB-based storage solutions.
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